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absolute maximum ratings parameter units i d @ v gs = -12v, t c =25c continuous drain current -6.7 i d @ v gs = -12v, t c =100c continuous drain current -4.3 i dm pulsed drain current -26.8 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 240 mj i ar avalanche current -6.7 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt -17 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in./1.6 mm from case for 10s) weight 0.98 (typical ) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened irhf597130power mosfet thru-hole (to-39) www.irf.com 1 100v, p-channel technology product summary part number radiation level r ds(on) i d irhf597130 100k rads (si) 0.24 ? -6.7a irhf593130 300k rads (si) 0.24 ? -6.7a for footnotes refer to the last page to-39 features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package light weight pd-96963 downloaded from: http:///
irhf597130 pr e-irradiation 2 www.irf.com note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -6.7 i sm pulse source current (body diode) -26.8 v sd diode forward voltage -5.0 v t j = 25c, i s = -6.7a, v gs = 0v t rr reverse recovery time 150 ns t j = 25c, i f = -6.7a, di/dt -100a/ s q rr reverse recovery charge 408 nc v dd -50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.13 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.24 ? v gs = -12v, i d = -4.3a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 4.3 s ( ) v ds = -15v, i ds = -4.3a i dss zero gate voltage drain current -10 v ds = -80v ,v gs = 0v -25 v ds = -80v, v gs = 0v, t j =125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 40 v gs =-12v, i d = -6.7a q gs gate-to-source charge 16 nc v ds = -50v q gd gate-to-drain (miller) charge 11 t d (on) turn-on delay time 25 v dd = -50v, i d = -6.7a t r rise time 50 v gs =-12v, r g = 7.5 ? t d (off) turn-off delay time 45 t f fall time 125 l s + l d total inductance 7.0 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 1250 v gs = 0v, v ds = -25v c oss output capacitance 318 p f f = 1.0mhz c rss reverse transfer capacitance 28 r g internal gate resistance 8.0 ? f = 1.0mhz, open drain na ? nh ns a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 5.0 r thja junction-to-ambient 175 c/w typical socket mount downloaded from: http:///
www.irf.com 3 pre-irradiation irhf597130 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k rads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 -100 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -4.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs =-20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -10 -10 a v ds = -80v, v gs =0v r ds(on) static drain-to-source 0.205 0.205 ? v gs = -12v, i d = -4.3a on-state resistance (to-3) r ds(on) static drain-to-source 0.24 0.24 ? v gs = -12v, i d = -4.3a on-state resistance(to-39) v sd diode forward voltage -5.0 -5.0 v v gs = 0v, i s = -6.7a 1. part number irhf597130 2. part number irhf593130 table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =5v @v gs =10v @v gs =15v @v gs =17.5v br 37.9 252.6 33.1 -100 -100 -100 -100 -100 i 59.7 314 30.5 -100 -100 -100 -100 -75 au 82.3 350 28.4 -100 -100 -100 -30 -100 -25 @v gs =20v -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 25 vgs vds br i au downloaded from: http:///
irhf597130 pr e-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 567891 0 -v gs , gate-to-source voltage (v) 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = -25v 60 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = -12v i d = -6.7a downloaded from: http:///
www.irf.com 5 pre-irradiation irhf597130
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 01234567 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 25c 1 10 100 -v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 q g, total gate charge (nc) 0 4 8 12 16 20 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -80v v ds = -50v vds= -20v i d = -6.7a for test circuit see figure 13 1 10 100 1000 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s downloaded from: http:///
irhf597130 pr e-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature fig 10a. switching time test circuit
1 0.1 %

+ - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 t c , case temperature (c) 0 1 2 3 4 5 6 7 - i d , d r a i n c u r r e n t ( a ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 pre-irradiation irhf597130 fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -3.0a -4.2a bottom -6.7a downloaded from: http:///
irhf597130 pr e-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, l =10.6mh peak i l = -6.7a, v gs = -12v i sd -6.7a, di/dt -530a/ s, v dd -100v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 09/05 case outline and dimensions to-205af(modified to-39) legend 1- source 2- gate 3- drain downloaded from: http:///

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